Features and Benefits

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The advantages of gallium nitride semiconductor lie in it's wide bandgap, large breakdown field, large saturation electron velocity, ability to form heterostructures, and high thermal conductivity. However, these advantages come at a price -- it is difficult to obtain high quality material and good surface termination, factors that are important to reduce gate leakage and dispersion (also known as current collapse). Also, since the material is piezoelectric and devices operate under extreme high electric field, careful engineering is required to ensure high reliability.

CorEnergy's proprietary MOCVD growth process, combined with meticulously executed production process ensures high quality material in every epitaxial wafer produced. Our advanced device fabrication technology combined with field-reduction techniques manage all the three challenges in GaN technology -- gate leakage, current collapse and reliability.